Develop A New Class of Memory
01 / FAST
MRAM is one of the fastest non-volatile memory (NVM) with extremely high to unlimited endurance. It can significantly improve computing performance.
02 / LOW-POWER
With 100 mV read voltage and sub-500 mV write voltage, the low voltage operation of MRAM provides lower power consumption and simpler power circuit design.
03 / SCALABLE
The integration of MRAM in CMOS back-end-of-line can be achieved with adding as few as 3 masks, providing low-cost fabrication. MTJ scaling also improves switching efficiency and reliability.
MAGNETIC RANDOM ACCESS MEMORY (MRAM)
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2022 Fall Campus Recruitment 2022秋季校園招募 click to apply
Developing the cutting-edge MRAM technology for both stand-alone and embedded applications, we have a dynamic and fast-paced startup work environment with a great career growth opportunity