MRAM is one of the fastest non-volatile memory (NVM) with extremely high to unlimited endurance. It can significantly improve computing performance.
With 100 mV read voltage and sub-500 mV write voltage, the low voltage operation of MRAM provides lower power consumption and simpler power circuit design.
The integration of MRAM in CMOS back-end-of-line can be achieved with adding as few as 3 masks, providing low-cost fabrication. MTJ scaling also improves switching efficiency and reliability.
Developing the cutting-edge MRAM technology for both stand-alone and embedded applications, we have a dynamic and fast-paced startup work environment with a great career growth opportunity